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Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation
2024
期刊
IEEE Transactions on Electron Devices
作者
Zixuan Feng
· Shiwei Feng
· Shijie Pan
· Xuan Li
· Binyu You
· Boyang Zhang
· Yaning Wang
· Yamin Zhang
· Xiang Zheng
- 页码 1-6
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2024.3412869