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Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse
2024
期刊
IEEE Transactions on Power Electronics
- 卷 39
- 期 4
- 页码 4714-4724
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0885-8993
- DOI: 10.1109/tpel.2024.3351169
