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Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current
2024
期刊
IEEE Transactions on Power Electronics
作者
Chunsheng Guo
· Shaoxiong Cui
· Yumeng Li
· Bojun Yao
· Yamin Zhang
· Hui Zhu
· Meng Zhang
· Shiwei Feng
- 卷 39
- 期 8
- 页码 9629-9637
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0885-8993
- DOI: 10.1109/tpel.2024.3397672
