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张亚民
  邮箱   yaminzhang@bjut.edu.cn 
论文

Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

期刊: IEEE Transactions on Electron Devices  2023
作者: Zhiwen Yao,Yilin Li,Zhirang Zhang,Yerong Sun,Xing Liu,Lixing Zhou,Bo Liu,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zhixuan Fang,Zeng Huang,Yiqun Zhang,Hui Zhu,Na Xie
DOI:10.1109/ted.2022.3231222

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

期刊: Microelectronics Journal  2023
作者: Yamin Zhang,Zhihong Feng,Xiaozhuang Lu,Shijie Pan,Xuan Li,Shiwei Feng,Kun Bai
DOI:10.1016/j.mejo.2023.105742

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Measurements of thermal boundary resistance (TBR) are of great significance in the fields of electronic packaging and thermal management. In this study, a measurement method based on a designed 1 × 1 mm2 chip with a heat source separated from a temperature sensor was developed. The chip consists of a temperature sensor with nine Schottky diodes connected in series and a heat source composed of metal wires, which are separated by SiO2 to realize electrical isolation. With this chip, the TBR of samples can be extracted from transient temperature response curves of GaN on a Si wafer using the structure function and transient dual interface test methods. In particular, the surface of samples was etched with uniform arrays to increase the measurement accuracy. The TBR measurements of four samples etched on the same wafer under different conditions were 1.62 ± 0.22 × 10−8, 1.6 ± 0.38 × 10−8, 1.49 ± 0.18 × 10−8, and 1.6 ± 0.35 × 10−8 m2K/W, indicating consistency of the results. This chip effectively expands the application of the structure function method to TBR measurements, which can be helpful for further research on interfacial heat transport.

期刊: Applied Physics Letters  2023
作者: Yamin Zhang,Junhua Qin,Xiaozhuang Lu,Kun Bai,Yuanjie Lv,Shijie Pan,Zhihong Feng,Shiwei Feng,Xuan Li
DOI:10.1063/5.0137965

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

期刊: IEEE Transactions on Instrumentation and Measurement  2023
作者: Yamin Zhang,Shiwei Feng,Yuwei Zhai,Xiang Zheng,Kun Duan,Meng Zhang,Xianwei Meng
DOI:10.1109/tim.2023.3239625

Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current

期刊: IEEE Transactions on Power Electronics  2023
作者: Yamin Zhang,Shiwei Feng,Xiang Zheng,Xianwei Meng,Meng Zhang,Shan Jiang
DOI:10.1109/tpel.2023.3242950

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

期刊: IEEE Transactions on Electron Devices  2022
作者: Lixing Zhou,Yamin Zhang,Jiayu Zhu,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2022.3193889

Effect of interface morphology on thermal contact resistance in thermal management of electronic devices

The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness [Formula: see text], the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.

期刊: International Journal of Modern Physics B  2022
作者: Xuan Li,Kun Bai,Xin He,Ya-Min Zhang,Shi-Wei Feng,Yu-Zheng Chen
DOI:10.1142/s0217979222500928

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

期刊: IEEE Transactions on Electron Devices  2022
作者: Bo Liu,Lixing Zhou,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zeng Huang,Na Xie,Zhixuan Fang,Hui Zhu
DOI:10.1109/ted.2022.3192330

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Abstract This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current–voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

期刊: Semiconductor Science and Technology  2022
作者: Yu Tian,Qiang Jiao,Erming Rui,Lixing Zhou,Yamin Zhang,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac84fc

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

期刊: Optics & Laser Technology  2022
作者: Xuan Li,Shijie Pan,Yamin Zhang,Kun Bai,Xiaozhuang Lu,Shiwei Feng,Yijia Ni
DOI:10.1016/j.optlastec.2022.108203

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

In this study, the current-transient method has been conducted to investigate the trap states in p-GaN gate high-electron-mobility transistors (HEMTs) under reverse gate stress. An irregular threshold voltage shift under reverse gate bias has been observed through the pulsed transfer measurements with different delay times. It suggests that both the hole insufficiency and hole trapping are generated during the reverse gate pulse bias. With proper selection of the delay time based on the pulsed characterizations, the hole detrapping can be effectively evaluated after the hole recovery is completed. In addition, by subtracting the trapping behavior caused by the measurement condition, the actual detrapping transient under reverse gate filling voltages can be obtained with the current-transient method. Three traps have been observed with the energy levels of 0.484, 0.390, and 0.235 eV. The identification of hole traps may provide a basis on the understanding of threshold voltage instability and further improvement of the reliability of p-GaN gate HEMTs.

期刊: Applied Physics Letters  2022
作者: Meng Zhang,Lixing Zhou,Yamin Zhang,Yanjie Li,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1063/5.0107459

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

期刊: Applied Physics A  2022
作者: Shiwei Feng,Wenwu Wang,Yamin Zhang,Xiaolei Wang,Jinjuan Xiang,Lixing Zhou
DOI:10.1007/s00339-022-05886-2

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

期刊: Review of Scientific Instruments  2021
作者: Shijie Pan,Sheng Wang,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Chaoxu Hu
DOI:10.1063/5.0054559

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

期刊: IEEE Transactions on Electron Devices  2021
作者: Lixing Zhou,Yamin Zhang,Kun Bai,Xin He,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2021.3108755

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

期刊: Semiconductor Science and Technology  2021
作者: Yamin Zhang,Lixing Zhou,Kun Bai,Xin He,Chaoxu Hu,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac1563

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Abstract The trap characteristics of low-temperature polysilicon thin film transistors (TFTs) are studied using a current transient method that is based on the trapping and detrapping of charge carriers from the trap sites in the device. Analysis of the measured current transient curve allowed three types of detrapping behavior to be identified, each of which displayed a different time constant, activation energy, and spatial position. This current transient method can be integrated into the negative bias temperature instability stress test used for the reliability study. The peak amplitudes of the traps increase because of the stress applied in the test, thus demonstrating that the degradation mechanism of the TFTs is closely related to changes in the traps in these devices.

期刊: Semiconductor Science and Technology  2021
作者: Bo Liu,Lixing Zhou,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zhixuan Fang,Zeng Huang,Si Wang,Na Xie,Hui Zhu
DOI:10.1088/1361-6641/ac3373

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Abstract A convenient, simple method is proposed to measure the front facet temperature, which is the highest temperature in the semiconductor laser diode (LD), of a GaAs-based laser by employing thermoreflectance technique. Using an optical system featured in fiber connection, we measured the facet reflectivity of the 808-nm AlGaInAs/AlGaAs LD, which gives information about the temperature of the output facet. The fiber system operates at the wavelength of 1550 nm which avoids the absorption of the probe beam by the tested LD and consists of a fiber-coupled 1550 nm laser illuminant and photodiode. All optical elements in the system are connected by the fibers. The current signal collected from the photodiode is related to the facet reflectivity and represents facet temperature. We compared the facet temperatures determined by thermoreflectance technique with the cavity temperature obtained by forward-voltage method and found that the former is as much as three times as the latter.

期刊: Journal of Physics: Conference Series  2021
作者: Xuan Li,Shijie Pan,Yamin Zhang,Kun Bai,Xaozhuang Lu,Shiwei Feng,Yijia Ni
DOI:10.1088/1742-6596/2112/1/012025

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

期刊: IEEE Transactions on Electron Devices  2020
作者: Lin Bai,Gang Lin,Shijie Pan,Xin He,Xiang Zheng,Yuxuan Xiao,Kun Bai,Yamin Zhang,Chang Liu,Shiwei Feng,Xuan Li
DOI:10.1109/ted.2020.3033259

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

期刊: IEEE Transactions on Electron Devices  2020
作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Jie Liu,Rui Li,Lei Jin,Kai Liu,Daping Chu,Si Wang,Hui Zhu,Chen Wang
DOI:10.1109/ted.2019.2961956

Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device

期刊: 2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME)  2020
作者: Xuan Li,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Yuzheng Chen
DOI:10.1109/icedme50972.2020.00017

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

期刊: IEEE Transactions on Electron Devices  2019
作者: Yamin Zhang,Xiaoyang Li,Zhaoxu Hu,Shijie Pan,Ying Yang,Xuan Li,Lin Bai,Gang Lin,Chao Peng,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2019.2928560

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

期刊: IEEE Transactions on Power Electronics  2019
作者: Chunsheng Guo,Hui Zhu,Lei Shi,Yuxuan Xiao,Kun Bai,Yamin Zhang,Shiwei Feng,Bangbing Shi
DOI:10.1109/tpel.2019.2894346

A voltage-transient method for characterizing traps in GaN HEMTs

期刊: Microelectronics Reliability  2019
作者: Shijie Pan,Yunpeng Jia,Yamin Zhang,Yifu Gao,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.microrel.2018.12.009

Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

期刊: IEEE Transactions on Device and Materials Reliability  2019
作者: Kun Bai,Xuan Li,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/tdmr.2019.2923107

A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors

期刊: IEEE Transactions on Electron Devices  2019
作者: Manpo Yang,Wenjuan Yu,Shiwei Feng,Yamin Zhang,Xin He
DOI:10.1109/ted.2019.2947423

Temperature distribution measurement based on field-programmable gate array embedded ring oscillators

期刊: Solid-State Electronics  2019
作者: Bangbing Shi,Yamin Zhang,Shiwei Feng,Wenjuan Yu
DOI:10.1016/j.sse.2019.05.002

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

期刊: IEEE Transactions on Electron Devices  2018
作者: Jingwei Li,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2018.2812798

Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors

期刊: Solid-State Electronics  2018
作者: Yunpeng Jia,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.sse.2018.05.009

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

期刊: IEEE Transactions on Power Electronics  2018
作者: Hui Zhu,Yamin Zhang,Dong Shi,Lei Shi,Shiwei Feng,Bangbing Shi
DOI:10.1109/tpel.2017.2736523

Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>

期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2018
作者: Kun Bai,Ya-Min Zhang,Quan-Bo He,Shi-Wei Feng,Bang-Bing Shi
DOI:10.1109/icsict.2018.8564990

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2018
作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Si Wang,Chen Wang,Lei Jin,Xiao Meng,Hui Zhu,Ying Yang
DOI:10.1109/icsict.2018.8564947

Temperature distribution measurement for chips based on FPGA

期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2018
作者: Bang-Bing Shi,Ya-Min Zhang,Shi-Jie Pan,Shi-Wei Feng,Wen-Juan Yu
DOI:10.1109/icsict.2018.8564914

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

期刊: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)  2018
作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Chen Wang,Hui Zhu,Xiao Meng
DOI:10.1109/edssc.2018.8487094

Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

期刊: Journal of Wuhan University of Technology-Mater. Sci. Ed.  2018
作者: Qiong Qi,Xiao Meng,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Yingqiao Zhang,Hui Zhu,Pengfei Wang
DOI:10.1007/s11595-018-1975-9

A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

期刊: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)  2018
作者: Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/edssc.2018.8487099

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

期刊: Solid-State Electronics  2018
作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Xiang Zheng,Xiao Meng,Hui Zhu
DOI:10.1016/j.sse.2018.04.006

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test

期刊: Microelectronics Journal  2017
作者: Xin He,Chao Wang,Yamin Zhang,Shiwei Feng,Jingwei Li
DOI:10.1016/j.mejo.2016.11.013

A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

期刊: IEEE Transactions on Electron Devices  2017
作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2017.2654481

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

期刊: IEEE Transactions on Electron Devices  2017
作者: Xiaodong Han,Jin Shao,Yanbin Qiao,Chunsheng Guo,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/ted.2017.2684180

Rapid test method for thermal characteristics of semiconductor devices

期刊: 2017 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM)  2017
作者: Yamin Zhang,Xin He,Jingwei Li,Xiang Zheng,Dong Shi,Shiwei Feng
DOI:10.1109/semi-therm.2017.7896932

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

期刊: Microelectronics Reliability  2016
作者: Junwei Yang,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.microrel.2016.05.001

Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy

期刊: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2016
作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/icsict.2016.7998916

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

期刊: Microscopy  2015
作者: Xiaodong Han,Yuan Ji,Shiwei Feng,Yamin Zhang,Li Wang
DOI:10.1093/jmicro/dfv236

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

期刊: IEEE Electron Device Letters  2015
作者: Kun Liu,Bangbing Shi,Yamin Zhang,Shiwei Feng,Lei Shi
DOI:10.1109/led.2015.2399774

Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

期刊: Journal of Semiconductors  2015
作者: Yamin Zhang,Kun Liu,Shiwei Feng,Lei Shi
DOI:10.1088/1674-4926/36/7/074005

Thermal investigation of LED array with multiple packages based on the superposition method

期刊: Microelectronics Journal  2015
作者: Bing Deng,Yanbin Qiao,Yamin Zhang,Shiwei Feng,Dong Shi
DOI:10.1016/j.mejo.2015.03.010

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

期刊: Semiconductor Science and Technology  2015
作者: Yan Zhao,Lei Shi,Xiaodong Han,Yuan Ji,Li Wang,Shiwei Feng,Yamin Zhang
DOI:10.1088/0268-1242/30/5/055016

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

期刊: IEEE Electron Device Letters  2014
作者: Guangchen Zhang,Bing Deng,Chunsheng Guo,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/led.2014.2300856

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

期刊: IEEE Transactions on Device and Materials Reliability  2014
作者: Chunsheng Guo,Lei Shi,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/tdmr.2014.2356233

Thermal analysis of multiple light sources based on the superposition method

期刊: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2014
作者: Junwei Yang,Yamin Zhang,Shiwei Feng,Dong Shi
DOI:10.1109/icsict.2014.7021444

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

期刊: Journal of Semiconductors  2014
作者: Yuan Yue,Bing Deng,Yamin Zhang,Shiwei Feng,Lin Ma
DOI:10.1088/1674-4926/35/9/094006

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

期刊: Journal of Semiconductors  2014
作者: Lin Ma,Bing Deng,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1088/1674-4926/35/10/104003

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

期刊: 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)  2014
作者: Chunsheng Guo,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/icrms.2014.7107170

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

期刊: Microelectronics Reliability  2013
作者: Bing Deng,Jianwei Zhang,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1016/j.microrel.2013.02.004

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

期刊: Journal of Applied Physics  2013
作者: Lin Ma,Bing Deng,Guangchen Zhang,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1063/1.4820763

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