简历详情
论文
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
期刊: IEEE Transactions on Electron Devices 2023作者: Zhiwen Yao,Yilin Li,Zhirang Zhang,Yerong Sun,Xing Liu,Lixing Zhou,Bo Liu,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zhixuan Fang,Zeng Huang,Yiqun Zhang,Hui Zhu,Na Xie
DOI:10.1109/ted.2022.3231222
A numerical calibration of structure-function transient thermal measurement based on Cauer RC network
期刊: Microelectronics Journal 2023作者: Yamin Zhang,Zhihong Feng,Xiaozhuang Lu,Shijie Pan,Xuan Li,Shiwei Feng,Kun Bai
DOI:10.1016/j.mejo.2023.105742
A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor
期刊: Applied Physics Letters 2023作者: Yamin Zhang,Junhua Qin,Xiaozhuang Lu,Kun Bai,Yuanjie Lv,Shijie Pan,Zhihong Feng,Shiwei Feng,Xuan Li
DOI:10.1063/5.0137965
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection
期刊: IEEE Transactions on Instrumentation and Measurement 2023作者: Yamin Zhang,Shiwei Feng,Yuwei Zhai,Xiang Zheng,Kun Duan,Meng Zhang,Xianwei Meng
DOI:10.1109/tim.2023.3239625
Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current
期刊: IEEE Transactions on Power Electronics 2023作者: Yamin Zhang,Shiwei Feng,Xiang Zheng,Xianwei Meng,Meng Zhang,Shan Jiang
DOI:10.1109/tpel.2023.3242950
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
期刊: IEEE Transactions on Electron Devices 2022作者: Lixing Zhou,Yamin Zhang,Jiayu Zhu,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2022.3193889
Effect of interface morphology on thermal contact resistance in thermal management of electronic devices
期刊: International Journal of Modern Physics B 2022作者: Xuan Li,Kun Bai,Xin He,Ya-Min Zhang,Shi-Wei Feng,Yu-Zheng Chen
DOI:10.1142/s0217979222500928
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
期刊: IEEE Transactions on Electron Devices 2022作者: Bo Liu,Lixing Zhou,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zeng Huang,Na Xie,Zhixuan Fang,Hui Zhu
DOI:10.1109/ted.2022.3192330
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
期刊: Semiconductor Science and Technology 2022作者: Yu Tian,Qiang Jiao,Erming Rui,Lixing Zhou,Yamin Zhang,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac84fc
Research on temperatures located within facet coating layers along z-axis of semiconductor lasers
期刊: Optics & Laser Technology 2022作者: Xuan Li,Shijie Pan,Yamin Zhang,Kun Bai,Xiaozhuang Lu,Shiwei Feng,Yijia Ni
DOI:10.1016/j.optlastec.2022.108203
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
期刊: Applied Physics Letters 2022作者: Meng Zhang,Lixing Zhou,Yamin Zhang,Yanjie Li,Xiaozhuang Lu,Kun Bai,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1063/5.0107459
Experimental investigation on dipole and band offset affected by charge neutrality level modulation
期刊: Applied Physics A 2022作者: Shiwei Feng,Wenwu Wang,Yamin Zhang,Xiaolei Wang,Jinjuan Xiang,Lixing Zhou
DOI:10.1007/s00339-022-05886-2
A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe
期刊: Review of Scientific Instruments 2021作者: Shijie Pan,Sheng Wang,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Chaoxu Hu
DOI:10.1063/5.0054559
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
期刊: IEEE Transactions on Electron Devices 2021作者: Lixing Zhou,Yamin Zhang,Kun Bai,Xin He,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2021.3108755
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
期刊: Semiconductor Science and Technology 2021作者: Yamin Zhang,Lixing Zhou,Kun Bai,Xin He,Chaoxu Hu,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac1563
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
期刊: Semiconductor Science and Technology 2021作者: Bo Liu,Lixing Zhou,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zhixuan Fang,Zeng Huang,Si Wang,Na Xie,Hui Zhu
DOI:10.1088/1361-6641/ac3373
Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers
期刊: Journal of Physics: Conference Series 2021作者: Xuan Li,Shijie Pan,Yamin Zhang,Kun Bai,Xaozhuang Lu,Shiwei Feng,Yijia Ni
DOI:10.1088/1742-6596/2112/1/012025
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage
期刊: IEEE Transactions on Electron Devices 2020作者: Lin Bai,Gang Lin,Shijie Pan,Xin He,Xiang Zheng,Yuxuan Xiao,Kun Bai,Yamin Zhang,Chang Liu,Shiwei Feng,Xuan Li
DOI:10.1109/ted.2020.3033259
Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
期刊: IEEE Transactions on Electron Devices 2020作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Jie Liu,Rui Li,Lei Jin,Kai Liu,Daping Chu,Si Wang,Hui Zhu,Chen Wang
DOI:10.1109/ted.2019.2961956
Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device
期刊: 2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME) 2020作者: Xuan Li,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Yuzheng Chen
DOI:10.1109/icedme50972.2020.00017
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
期刊: IEEE Transactions on Electron Devices 2019作者: Yamin Zhang,Xiaoyang Li,Zhaoxu Hu,Shijie Pan,Ying Yang,Xuan Li,Lin Bai,Gang Lin,Chao Peng,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2019.2928560
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current
期刊: IEEE Transactions on Power Electronics 2019作者: Chunsheng Guo,Hui Zhu,Lei Shi,Yuxuan Xiao,Kun Bai,Yamin Zhang,Shiwei Feng,Bangbing Shi
DOI:10.1109/tpel.2019.2894346
A voltage-transient method for characterizing traps in GaN HEMTs
期刊: Microelectronics Reliability 2019作者: Shijie Pan,Yunpeng Jia,Yamin Zhang,Yifu Gao,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.microrel.2018.12.009
Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
期刊: IEEE Transactions on Device and Materials Reliability 2019作者: Kun Bai,Xuan Li,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/tdmr.2019.2923107
A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors
期刊: IEEE Transactions on Electron Devices 2019作者: Manpo Yang,Wenjuan Yu,Shiwei Feng,Yamin Zhang,Xin He
DOI:10.1109/ted.2019.2947423
Temperature distribution measurement based on field-programmable gate array embedded ring oscillators
期刊: Solid-State Electronics 2019作者: Bangbing Shi,Yamin Zhang,Shiwei Feng,Wenjuan Yu
DOI:10.1016/j.sse.2019.05.002
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs
期刊: IEEE Transactions on Electron Devices 2018作者: Jingwei Li,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2018.2812798
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
期刊: Solid-State Electronics 2018作者: Yunpeng Jia,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.sse.2018.05.009
Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal
期刊: IEEE Transactions on Power Electronics 2018作者: Hui Zhu,Yamin Zhang,Dong Shi,Lei Shi,Shiwei Feng,Bangbing Shi
DOI:10.1109/tpel.2017.2736523
Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>
期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018作者: Kun Bai,Ya-Min Zhang,Quan-Bo He,Shi-Wei Feng,Bang-Bing Shi
DOI:10.1109/icsict.2018.8564990
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure
期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Si Wang,Chen Wang,Lei Jin,Xiao Meng,Hui Zhu,Ying Yang
DOI:10.1109/icsict.2018.8564947
Temperature distribution measurement for chips based on FPGA
期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018作者: Bang-Bing Shi,Ya-Min Zhang,Shi-Jie Pan,Shi-Wei Feng,Wen-Juan Yu
DOI:10.1109/icsict.2018.8564914
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
期刊: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) 2018作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Chen Wang,Hui Zhu,Xiao Meng
DOI:10.1109/edssc.2018.8487094
Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
期刊: Journal of Wuhan University of Technology-Mater. Sci. Ed. 2018作者: Qiong Qi,Xiao Meng,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Yingqiao Zhang,Hui Zhu,Pengfei Wang
DOI:10.1007/s11595-018-1975-9
A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs
期刊: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) 2018作者: Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/edssc.2018.8487099
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
期刊: Solid-State Electronics 2018作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Xiang Zheng,Xiao Meng,Hui Zhu
DOI:10.1016/j.sse.2018.04.006
Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test
期刊: Microelectronics Journal 2017作者: Xin He,Chao Wang,Yamin Zhang,Shiwei Feng,Jingwei Li
DOI:10.1016/j.mejo.2016.11.013
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
期刊: IEEE Transactions on Electron Devices 2017作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2017.2654481
Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
期刊: IEEE Transactions on Electron Devices 2017作者: Xiaodong Han,Jin Shao,Yanbin Qiao,Chunsheng Guo,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/ted.2017.2684180
Rapid test method for thermal characteristics of semiconductor devices
期刊: 2017 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) 2017作者: Yamin Zhang,Xin He,Jingwei Li,Xiang Zheng,Dong Shi,Shiwei Feng
DOI:10.1109/semi-therm.2017.7896932
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
期刊: Microelectronics Reliability 2016作者: Junwei Yang,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1016/j.microrel.2016.05.001
Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy
期刊: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2016作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/icsict.2016.7998916
B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy
期刊: Microscopy 2015作者: Xiaodong Han,Yuan Ji,Shiwei Feng,Yamin Zhang,Li Wang
DOI:10.1093/jmicro/dfv236
Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors
期刊: IEEE Electron Device Letters 2015作者: Kun Liu,Bangbing Shi,Yamin Zhang,Shiwei Feng,Lei Shi
DOI:10.1109/led.2015.2399774
Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress
期刊: Journal of Semiconductors 2015作者: Yamin Zhang,Kun Liu,Shiwei Feng,Lei Shi
DOI:10.1088/1674-4926/36/7/074005
Thermal investigation of LED array with multiple packages based on the superposition method
期刊: Microelectronics Journal 2015作者: Bing Deng,Yanbin Qiao,Yamin Zhang,Shiwei Feng,Dong Shi
DOI:10.1016/j.mejo.2015.03.010
Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy
期刊: Semiconductor Science and Technology 2015作者: Yan Zhao,Lei Shi,Xiaodong Han,Yuan Ji,Li Wang,Shiwei Feng,Yamin Zhang
DOI:10.1088/0268-1242/30/5/055016
Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs
期刊: IEEE Electron Device Letters 2014作者: Guangchen Zhang,Bing Deng,Chunsheng Guo,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/led.2014.2300856
Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs
期刊: IEEE Transactions on Device and Materials Reliability 2014作者: Chunsheng Guo,Lei Shi,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/tdmr.2014.2356233
Thermal analysis of multiple light sources based on the superposition method
期刊: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2014作者: Junwei Yang,Yamin Zhang,Shiwei Feng,Dong Shi
DOI:10.1109/icsict.2014.7021444
Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method
期刊: Journal of Semiconductors 2014作者: Yuan Yue,Bing Deng,Yamin Zhang,Shiwei Feng,Lin Ma
DOI:10.1088/1674-4926/35/9/094006
Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
期刊: Journal of Semiconductors 2014作者: Lin Ma,Bing Deng,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1088/1674-4926/35/10/104003
The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs
期刊: 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS) 2014作者: Chunsheng Guo,Xueqin Gong,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1109/icrms.2014.7107170
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
期刊: Microelectronics Reliability 2013作者: Bing Deng,Jianwei Zhang,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1016/j.microrel.2013.02.004
Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements
期刊: Journal of Applied Physics 2013作者: Lin Ma,Bing Deng,Guangchen Zhang,Hui Zhu,Shiwei Feng,Yamin Zhang
DOI:10.1063/1.4820763